TY - GEN
T1 - Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique
AU - Sekiguchi, Takashi
AU - Prakash, Ronit R.
AU - Jiptner, Karolin
AU - Luo, Xian Jia
AU - Chen, Jun
AU - Miyamura, Yoshiji
AU - Harada, Hirofumi
N1 - Publisher Copyright:
© (2016) Trans Tech Publications, Switzerland.
PY - 2016
Y1 - 2016
N2 - The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely random GB annihilation at the initial stage and Σ3 generation and annihilation at the steady state.
AB - The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely random GB annihilation at the initial stage and Σ3 generation and annihilation at the steady state.
UR - http://www.scopus.com/inward/record.url?scp=84953876884&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84953876884&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.242.35
DO - 10.4028/www.scientific.net/SSP.242.35
M3 - Conference contribution
AN - SCOPUS:84953876884
SN - 9783038356080
T3 - Solid State Phenomena
SP - 35
EP - 40
BT - Gettering and Defect Engineering in Semiconductor Technology XVI
A2 - Pichler, Peter
A2 - Pichler, Peter
PB - Trans Tech Publications Ltd
T2 - 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
Y2 - 20 September 2015 through 25 September 2015
ER -