Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

Wan Young Chung, Go Sakai, Kengo Shimanoe, Norio Miura, Duk Dong Lee, Noboru Yamazoe

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)


Thin films of indium oxide were prepared on alumina and silicon substrates by spin-coating from an aqueous acetic acid solution dissolving In(OH)3 and ammonium carboxymethyl cellulose. The films could cover well the large grains of rough alumina as well as the flat surface of silicon. By changing the number of spin-coating, the film thickness was well controlled between 70 nm and 210 nm on alumina or between 65 nm and 220 nm on silicon, as observed by cross-sectional FE-SEM. Gas sensing properties including sensitivity, selectivity and the rates of response and recovery were strongly dependent on the kind of substrate, film thickness and operating temperature.

Original languageEnglish
Pages (from-to)312-315
Number of pages4
JournalSensors and Actuators, B: Chemical
Issue number1
Publication statusPublished - Jun 30 2000
EventIMCS-7: 7th International Meeting on Chemical Sensors - Beijing, China
Duration: Jul 27 1998Jul 30 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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