Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

M. Sugiho; T. Kamae; K. Makishima; T. Takahashi; T. Murakami; M. Tashiro; Y. Fukazawa; M. Kaneda; T. Tamura; N. Iyomoto; M. Sugizaki; H. Ozawa; A. Kubota; K. Nakazawa; K. Yamaoka; M. Kokubun; N. Ota; C. Tanihata; N. Isobe; S. Kubo; Y. Terada; Y. Matsumoto; Y. Uchiyama; D. Yonetoku; I. Takahashi; J. Kotoku; S. Watanabe; Y. Ezoe

Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, M. Kaneda, T. Tamura, N. Iyomoto, M. Sugizaki, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, S. KuboY. Terada, Y. Matsumoto, Y. Uchiyama, D. Yonetoku, I. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

Research output: Contribution to conference › Paper › peer-review

Abstract

The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10^-5 counts s^-1 cm^-2 keV^-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm² in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

Original language	English
Pages	7/66-7/70
Publication status	Published - 2000
Externally published	Yes
Event	2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France Duration: Oct 15 2000 → Oct 20 2000

Other

Other	2000 IEEE Nuclear Science Symposium Conference Record
Country/Territory	France
City	Lyon
Period	10/15/00 → 10/20/00

All Science Journal Classification (ASJC) codes

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Cite this

Sugiho, M., Kamae, T., Makishima, K., Takahashi, T., Murakami, T., Tashiro, M., Fukazawa, Y., Kaneda, M., Tamura, T., Iyomoto, N., Sugizaki, M., Ozawa, H., Kubota, A., Nakazawa, K., Yamaoka, K., Kokubun, M., Ota, N., Tanihata, C., Isobe, N., ... Ezoe, Y. (2000). Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector. 7/66-7/70. Paper presented at 2000 IEEE Nuclear Science Symposium Conference Record, Lyon, France.

Sugiho, M, Kamae, T, Makishima, K, Takahashi, T, Murakami, T, Tashiro, M, Fukazawa, Y, Kaneda, M, Tamura, T, Iyomoto, N, Sugizaki, M, Ozawa, H, Kubota, A, Nakazawa, K, Yamaoka, K, Kokubun, M, Ota, N, Tanihata, C, Isobe, N, Kubo, S, Terada, Y, Matsumoto, Y, Uchiyama, Y, Yonetoku, D, Takahashi, I, Kotoku, J, Watanabe, S & Ezoe, Y 2000, 'Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector', Paper presented at 2000 IEEE Nuclear Science Symposium Conference Record, Lyon, France, 10/15/00 - 10/20/00 pp. 7/66-7/70.

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title = "Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector",

abstract = "The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.",

author = "M. Sugiho and T. Kamae and K. Makishima and T. Takahashi and T. Murakami and M. Tashiro and Y. Fukazawa and M. Kaneda and T. Tamura and N. Iyomoto and M. Sugizaki and H. Ozawa and A. Kubota and K. Nakazawa and K. Yamaoka and M. Kokubun and N. Ota and C. Tanihata and N. Isobe and S. Kubo and Y. Terada and Y. Matsumoto and Y. Uchiyama and D. Yonetoku and I. Takahashi and J. Kotoku and S. Watanabe and Y. Ezoe",

year = "2000",

language = "English",

pages = "7/66--7/70",

note = "2000 IEEE Nuclear Science Symposium Conference Record ; Conference date: 15-10-2000 Through 20-10-2000",

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TY - CONF

T1 - Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

AU - Sugiho, M.

AU - Kamae, T.

AU - Makishima, K.

AU - Takahashi, T.

AU - Murakami, T.

AU - Tashiro, M.

AU - Fukazawa, Y.

AU - Kaneda, M.

AU - Tamura, T.

AU - Iyomoto, N.

AU - Sugizaki, M.

AU - Ozawa, H.

AU - Kubota, A.

AU - Nakazawa, K.

AU - Yamaoka, K.

AU - Kokubun, M.

AU - Ota, N.

AU - Tanihata, C.

AU - Isobe, N.

AU - Kubo, S.

AU - Terada, Y.

AU - Matsumoto, Y.

AU - Uchiyama, Y.

AU - Yonetoku, D.

AU - Takahashi, I.

AU - Kotoku, J.

AU - Watanabe, S.

AU - Ezoe, Y.

PY - 2000

Y1 - 2000

N2 - The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

AB - The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

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M3 - Paper

AN - SCOPUS:0034593751

SP - 7/66-7/70

T2 - 2000 IEEE Nuclear Science Symposium Conference Record

Y2 - 15 October 2000 through 20 October 2000

ER -

Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

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