Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, N. Iyomoto, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, Y. Terada, Y. Matsumoto, Y. Uchiyama, D. YonetokuI. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)


The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

Original languageEnglish
Pages (from-to)426-429
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number3 I
Publication statusPublished - Jun 2001
Externally publishedYes
Event2000 Nuclear Science Symphosium (NSS) - Lyon, France
Duration: Oct 15 2000Oct 20 2000

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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