Spatially Controlled Nucleation of Single-Crystal Graphene on Cu Assisted by Stacked Ni

Dong Ding, Pablo Solís-Fernández, Hiroki Hibino, Hiroki Ago

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


In spite of recent progress of graphene growth using chemical vapor deposition, it is still a challenge to precisely control the nucleation site of graphene for the development of wafer-scale single-crystal graphene. In addition, the postgrowth patterning used for device fabrication deteriorates the quality of graphene. Herein we demonstrate the site-selective nucleation of single-crystal graphene on Cu foil based on spatial control of the local CH4 concentration by a perforated Ni foil. The catalytically active Ni foil acts as a CH4 modulator, resulting in millimeter-scale single-crystal grains at desired positions. The perforated Ni foil also allows to synthesize patterned graphene without any postgrowth processing. Furthermore, the uniformity of monolayer graphene is significantly improved when a plain Ni foil is placed below the Cu. Our findings offer a facile and effective way to control the nucleation of high-quality graphene, meeting the requirements of industrial processing.

Original languageEnglish
Pages (from-to)11196-11204
Number of pages9
JournalACS nano
Issue number12
Publication statusPublished - Dec 27 2016

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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