Spatial nonuniformity in resistive-switching memory effects of nio

Keisuke Oka, Takeshi Yanagida, Kazuki Nagashima, Masaki Kanai, Tomoji Kawai, Jin Soo Kim, Bae Ho Park

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching location, which is crucial information to design reliable devices. In this communication, we demonstrate the identification of the spatial switching location of bipolar RS by introducing asymmetrically passivated planar NiO nanowire junctions. We have successfully identified that the bipolar RS in NiO occurs near the cathode rather than the anode. This trend can be interpreted in terms of an electrochemical redox model based on ion migration and p-type conduction.

Original languageEnglish
Pages (from-to)12482-12485
Number of pages4
JournalJournal of the American Chemical Society
Issue number32
Publication statusPublished - Aug 17 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry


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