Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Akio Kaneta; Tomoaki Izumi; Koichi Okamoto; Yoichi Kawakami; Shigeo Fujita; Yoshihito Narita; Tsutomu Inoue; Takashi Mukai

doi:10.1143/JJAP.40.110

Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Akio Kaneta, Tomoaki Izumi, Koichi Okamoto, Yoichi Kawakami, Shigeo Fujita, Yoshihito Narita, Tsutomu Inoue, Takashi Mukai

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

Original language	English
Pages (from-to)	110-111
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.40.110
Publication status	Published - Jan 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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T1 - Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

AU - Kaneta, Akio

AU - Izumi, Tomoaki

AU - Okamoto, Koichi

AU - Kawakami, Yoichi

AU - Fujita, Shigeo

AU - Narita, Yoshihito

AU - Inoue, Tsutomu

AU - Mukai, Takashi

PY - 2001/1

Y1 - 2001/1

N2 - Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

AB - Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

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Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Abstract

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