Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics: Technology evolution for silicon nano-electronics)

Kohei Hamaya, Yuichiro Ando, Taizoh Sadoh

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)10101-1〜7
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number1
Publication statusPublished - Jan 2011

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