Solvation effects on collisional processes of size-selected I-2(CO2)n cluster ions with silicon surface

Hisato Yasumatsu; Tatsuya Tsukuda; Toshiki Sugai; Akira Terasaki; Takashi Nagata; Tamotsu Kondow

doi:10.1142/s0218625x96001625

Solvation effects on collisional processes of size-selected I^-₂(CO₂)_n cluster ions with silicon surface

Hisato Yasumatsu, Tatsuya Tsukuda, Toshiki Sugai, Akira Terasaki, Takashi Nagata, Tamotsu Kondow

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Collisional processes of I^-₂ (CO₂)_n with a silicon surface were investigated. Size-selected I^-₂ (CO₂)_n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I^-₂ of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I^-, I^-(CO₂), I^-(CO₂)₂, I^-₂, I^-₂(CO₂), and I^-₀(CO₂)₂. The molecular dynamics simulation revealed that the dissociation of I^-₂ occurs through vibrational and rotational excitation. The I^-₂ dissociation was found to be either retarded or accelerated by the presence of the solvent CO₂ molecules. The solvation effects on the dissociation of I^-₂ were explained in terms of energy transfer between I^-₂ and CO₂ solvent molecules and a complex formed on the surface at the moment of the collision.

Original language	English
Pages (from-to)	901-904
Number of pages	4
Journal	Surface Review and Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1142/s0218625x96001625
Publication status	Published - Feb 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Solvation effects on collisional processes of size-selected I-2(CO2)n cluster ions with silicon surface",

abstract = "Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.",

author = "Hisato Yasumatsu and Tatsuya Tsukuda and Toshiki Sugai and Akira Terasaki and Takashi Nagata and Tamotsu Kondow",

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AU - Yasumatsu, Hisato

AU - Tsukuda, Tatsuya

AU - Sugai, Toshiki

AU - Terasaki, Akira

AU - Nagata, Takashi

AU - Kondow, Tamotsu

PY - 1996/2

Y1 - 1996/2

N2 - Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.

AB - Collisional processes of I-2 (CO2)n with a silicon surface were investigated. Size-selected I-2 (CO2)n (n = 0-30) were allowed to collide with a silicon surface at collision energies per I-2 of 1-150 eV at almost normal incidence angles. All the anions scattered from the surface were I-, I-(CO2), I-(CO2)2, I-2, I-2(CO2), and I-0(CO2)2. The molecular dynamics simulation revealed that the dissociation of I-2 occurs through vibrational and rotational excitation. The I-2 dissociation was found to be either retarded or accelerated by the presence of the solvent CO2 molecules. The solvation effects on the dissociation of I-2 were explained in terms of energy transfer between I-2 and CO2 solvent molecules and a complex formed on the surface at the moment of the collision.

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Solvation effects on collisional processes of size-selected I^-₂(CO₂)_n cluster ions with silicon surface

Abstract

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