Solution processed high performance pentacene thin-film transistors

Ting Han Chao; Ming Jen Chang; Motonori Watanabe; Ming Hui Luo; Yuan Jay Chang; Tzu Chien Fang; Kew Yu Chen; Tahsin J. Chow

doi:10.1039/c2cc31754k

Solution processed high performance pentacene thin-film transistors

Ting Han Chao, Ming Jen Chang, Motonori Watanabe, Ming Hui Luo, Yuan Jay Chang, Tzu Chien Fang, Kew Yu Chen, Tahsin J. Chow

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm² V^–1 s^–1 with an on/off ratio of 10⁶.

Original language	English
Pages (from-to)	6148-6150
Number of pages	3
Journal	Chemical Communications
Volume	48
Issue number	49
DOIs	https://doi.org/10.1039/c2cc31754k
Publication status	Published - May 23 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/c2cc31754k

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abstract = "High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm2 V–1 s–1 with an on/off ratio of 106.",

author = "Chao, {Ting Han} and Chang, {Ming Jen} and Motonori Watanabe and Luo, {Ming Hui} and Chang, {Yuan Jay} and Fang, {Tzu Chien} and Chen, {Kew Yu} and Chow, {Tahsin J.}",

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AU - Chao, Ting Han

AU - Chang, Ming Jen

AU - Watanabe, Motonori

AU - Luo, Ming Hui

AU - Chang, Yuan Jay

AU - Fang, Tzu Chien

AU - Chen, Kew Yu

AU - Chow, Tahsin J.

PY - 2012/5/23

Y1 - 2012/5/23

N2 - High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm2 V–1 s–1 with an on/off ratio of 106.

AB - High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm2 V–1 s–1 with an on/off ratio of 106.

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JO - Chemical Communications

JF - Chemical Communications

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ER -

Solution processed high performance pentacene thin-film transistors

Abstract

All Science Journal Classification (ASJC) codes

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