TY - JOUR
T1 - Solution-Processable Organic Semiconductors Featuring S-Shaped Dinaphthothienothiophene (S-DNTT)
T2 - Effects of Alkyl Chain Length on Self-Organization and Carrier Transport Properties
AU - Yamaguchi, Yuji
AU - Kojiguchi, Yuka
AU - Kawata, So
AU - Mori, Tatsuya
AU - Okamoto, Kazuo
AU - Tsutsui, Masanori
AU - Koganezawa, Tomoyuki
AU - Katagiri, Hiroshi
AU - Yasuda, Takuma
N1 - Funding Information:
This work was supported in part by the Grant-in-Aid for JSPS KAKENHI grant no. JP18H02048 (T.Y.). The synchrotron 2D-GIXD experiments were performed at the BL19B2 beamline of SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (proposal nos. 2018B1774 and 2019A1823). The authors are grateful for the support provided by the Cooperative Research Program “Network Joint Research Center for Materials and Devices” and the computer facilities at the Research Institute for Information Technology, Kyushu University.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/6/23
Y1 - 2020/6/23
N2 - A series of dialkylated dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophenes (S-DNTTs) featuring an S-shaped sinuous π-core substituted with different alkyl chains were developed as versatile p-type organic semiconductors. The effects of the crooked shape of the π-core and the length of the flexible alkyl chains on the solution processability, thermal durability, self-organization ability, and charge-transport functionality were systematically investigated. Because the newly developed dialkylated S-DNTTs show relatively high solubilities in organic solvents, high-performing organic field-effect transistors (OFETs) can be fabricated using both dip-coating and vacuum-deposition techniques. It was revealed that the OFET performance for dialkylated S-DNTTs was significantly affected by subtle variations in the alkyl chain length. Consequently, among this family, S-DNTT-10 with longer decyl groups achieved the highest field-effect hole mobilities of up to 11 and 3.5 cm2 V-1 s-1 with on/off current ratios of over 107 in the dip-coated and vacuum-deposited OFETs, respectively. In addition, the high OFET performance of the S-DNTT-10-based system can be preserved for more than three months under ambient conditions, demonstrating its long-term stability and high durability. As revealed by two-dimensional grazing incidence X-ray diffraction analyses, a simple dip-coating method can induce unidirectional molecular orientation/assembly and thereby produce highly oriented single-crystalline domains, leading to such high hole mobilities exceeding 10 cm2 V-1 s-1 in the dip-coated OFETs.
AB - A series of dialkylated dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophenes (S-DNTTs) featuring an S-shaped sinuous π-core substituted with different alkyl chains were developed as versatile p-type organic semiconductors. The effects of the crooked shape of the π-core and the length of the flexible alkyl chains on the solution processability, thermal durability, self-organization ability, and charge-transport functionality were systematically investigated. Because the newly developed dialkylated S-DNTTs show relatively high solubilities in organic solvents, high-performing organic field-effect transistors (OFETs) can be fabricated using both dip-coating and vacuum-deposition techniques. It was revealed that the OFET performance for dialkylated S-DNTTs was significantly affected by subtle variations in the alkyl chain length. Consequently, among this family, S-DNTT-10 with longer decyl groups achieved the highest field-effect hole mobilities of up to 11 and 3.5 cm2 V-1 s-1 with on/off current ratios of over 107 in the dip-coated and vacuum-deposited OFETs, respectively. In addition, the high OFET performance of the S-DNTT-10-based system can be preserved for more than three months under ambient conditions, demonstrating its long-term stability and high durability. As revealed by two-dimensional grazing incidence X-ray diffraction analyses, a simple dip-coating method can induce unidirectional molecular orientation/assembly and thereby produce highly oriented single-crystalline domains, leading to such high hole mobilities exceeding 10 cm2 V-1 s-1 in the dip-coated OFETs.
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U2 - 10.1021/acs.chemmater.0c01740
DO - 10.1021/acs.chemmater.0c01740
M3 - Article
AN - SCOPUS:85087589792
SN - 0897-4756
VL - 32
SP - 5350
EP - 5360
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 12
ER -