Solution growth of self-standing 6H-SiC single crystal using metal solvent

K. Kusunoki; S. Munetoh; K. Kamei; M. Hasebe; T. Ujihara; K. Nakajima

doi:10.4028/www.scientific.net/msf.457-460.123

Solution growth of self-standing 6H-SiC single crystal using metal solvent

K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara, K. Nakajima

Research output: Contribution to journal › Conference article › peer-review

42 Citations (Scopus)

Abstract

Silicon carbide (SiC) crystal growth from ternary solutions Si-C-X where X is a transition metal was studied. In order to select the desirable transition element and to determine the solution composition, we have conducted the calculations of ternary phase diagrams by means of CALPHAD (CALculation of PHase Diagrams) method. Preliminary growth experiments without a seed crystal were also performed. Among various Si-based solutions, Si-C-Ti was one of the most effective solutions to increase crystal growth rate compared with Si-C. Optical microscopic observation of the obtained SiC etched by molten KOH showed no micropipe defects in the crystals. We have also performed the growth experiments with 6H-SiC seed crystal under temperature gradient. As a result, we have successfully obtained a 12mm × 12mm self standing SiC crystal.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Materials Science Forum
Volume	457-460
Issue number	I
DOIs	https://doi.org/10.4028/www.scientific.net/msf.457-460.123
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Solution growth of self-standing 6H-SiC single crystal using metal solvent",

abstract = "Silicon carbide (SiC) crystal growth from ternary solutions Si-C-X where X is a transition metal was studied. In order to select the desirable transition element and to determine the solution composition, we have conducted the calculations of ternary phase diagrams by means of CALPHAD (CALculation of PHase Diagrams) method. Preliminary growth experiments without a seed crystal were also performed. Among various Si-based solutions, Si-C-Ti was one of the most effective solutions to increase crystal growth rate compared with Si-C. Optical microscopic observation of the obtained SiC etched by molten KOH showed no micropipe defects in the crystals. We have also performed the growth experiments with 6H-SiC seed crystal under temperature gradient. As a result, we have successfully obtained a 12mm × 12mm self standing SiC crystal.",

author = "K. Kusunoki and S. Munetoh and K. Kamei and M. Hasebe and T. Ujihara and K. Nakajima",

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note = "Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 ; Conference date: 05-10-2003 Through 10-10-2003",

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T1 - Solution growth of self-standing 6H-SiC single crystal using metal solvent

AU - Kusunoki, K.

AU - Munetoh, S.

AU - Kamei, K.

AU - Hasebe, M.

AU - Ujihara, T.

AU - Nakajima, K.

PY - 2004

Y1 - 2004

N2 - Silicon carbide (SiC) crystal growth from ternary solutions Si-C-X where X is a transition metal was studied. In order to select the desirable transition element and to determine the solution composition, we have conducted the calculations of ternary phase diagrams by means of CALPHAD (CALculation of PHase Diagrams) method. Preliminary growth experiments without a seed crystal were also performed. Among various Si-based solutions, Si-C-Ti was one of the most effective solutions to increase crystal growth rate compared with Si-C. Optical microscopic observation of the obtained SiC etched by molten KOH showed no micropipe defects in the crystals. We have also performed the growth experiments with 6H-SiC seed crystal under temperature gradient. As a result, we have successfully obtained a 12mm × 12mm self standing SiC crystal.

AB - Silicon carbide (SiC) crystal growth from ternary solutions Si-C-X where X is a transition metal was studied. In order to select the desirable transition element and to determine the solution composition, we have conducted the calculations of ternary phase diagrams by means of CALPHAD (CALculation of PHase Diagrams) method. Preliminary growth experiments without a seed crystal were also performed. Among various Si-based solutions, Si-C-Ti was one of the most effective solutions to increase crystal growth rate compared with Si-C. Optical microscopic observation of the obtained SiC etched by molten KOH showed no micropipe defects in the crystals. We have also performed the growth experiments with 6H-SiC seed crystal under temperature gradient. As a result, we have successfully obtained a 12mm × 12mm self standing SiC crystal.

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ER -

Solution growth of self-standing 6H-SiC single crystal using metal solvent

Abstract

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