Solubility and diffusion coefficient of electrically active titanium in silicon

Shigehiro Kuge; Hiroshi Nakashima

doi:10.1143/JJAP.30.2659

Solubility and diffusion coefficient of electrically active titanium in silicon

Shigehiro Kuge, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of E_c — 0.09 V, a donor level of E_c — 0.21 eV and a double-donor level of E_V + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by D_Ti= 1.2 x 10^-1exp (-2.05/kT) cm² s^-1.

Original language	English
Pages (from-to)	2659-2663
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	11R
DOIs	https://doi.org/10.1143/JJAP.30.2659
Publication status	Published - Nov 1991

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Solubility and diffusion coefficient of electrically active titanium in silicon",

abstract = "The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.",

author = "Shigehiro Kuge and Hiroshi Nakashima",

year = "1991",

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doi = "10.1143/JJAP.30.2659",

language = "English",

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T1 - Solubility and diffusion coefficient of electrically active titanium in silicon

AU - Kuge, Shigehiro

AU - Nakashima, Hiroshi

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N2 - The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.

AB - The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of Ec — 0.09 V, a donor level of Ec — 0.21 eV and a double-donor level of EV + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150°C and in the lower range 600-800°C. The diffusion coefficient is represented by DTi= 1.2 x 10-1exp (-2.05/kT) cm2 s-1.

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Solubility and diffusion coefficient of electrically active titanium in silicon

Abstract

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