Solid-Phase Growth of β-FeSi_2 on Si Substrates with Different Crystal Orientations

Yuji Murakami, Yutaka Yoshikado, Atsushi Kenjo, Tsuyoshi Yoshitake, Taizoh Sadoh, Taizo Sado

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Orientation dependent solid-phase growth of β-FeSi_2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi_2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi_2 and Si substrates, i.e., the lattice mismatch between β-FeSi_2(100) and Si (100), β-FeSi_2 (110) or (101) and Si (111), and β-FeSi_2(010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.
Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Issue number2
Publication statusPublished - Sept 26 2003


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