Solid phase crystallization of a-Si in Si/Ge multi-layer

Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review


We have investigated the effects of local Ge-insertion in a-Si films on solid-phase crystallization (SPC). Experiments were performed by using three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2. These samples were annealed at 600°C. The results for the structure (a) with Ge films of 5 nm, Ge atoms were completely diffused into a-Si regions, and no-enhanced SPC was detected. However, if Ge thickness was increased to 15 nm, Ge atoms were localized. Such phenomena became significant by (b) and (c) structures even for samples with Ge films of 5 nm. In addition, significant enhancement of SPC of a-Si was found. These results indicated that crystal nucleation was initiated at Ge layers, and then propagated into a-Si layer. Therefore, interface nucleation driven SPC becomes possible by using the structures (b) and (c). It is expected that this process can be used to grow oriented Si crystals on SiO2.

Original languageEnglish
Pages (from-to)147-150
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Issue number2
Publication statusPublished - Sept 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Computer Science
  • Electrical and Electronic Engineering


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