Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure

Y. Murakami, A. Kenjo, T. Sadoh, T. Yoshitake, M. Miyao

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


Dependence of solid-phase growth of β-FeSi2 thin films on the crystal orientation of Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si(100), (110) and (111) stacked structures. X-ray diffraction (XRD) measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100)>(111)>(110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2(100) and Si(100), β-FeSi2(110) or (101) and Si(111), and β-FeSi 2(010) or (001) and Si(110) of 1.4-2.0%, 5.3-5.5% and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

Original languageEnglish
Pages (from-to)68-71
Number of pages4
JournalThin Solid Films
Issue number1
Publication statusPublished - Aug 2 2004
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: Oct 8 2003Oct 13 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure'. Together they form a unique fingerprint.

Cite this