Solid- and gas-source "hybrid" Si molecular beam epitaxy for a Si1-xGex/Si single quantum well electroluminescent device

Y. Kato; S. Fukatsu; Y. Shiraki

doi:10.1007/BF02651266

Solid- and gas-source "hybrid" Si molecular beam epitaxy for a Si_1-xGe_x/Si single quantum well electroluminescent device

Y. Kato, S. Fukatsu, Y. Shiraki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A p-i-n diode for a Si_1-xGe_x/Si single quantum well (SQW) electroluminescent (EL) device was successfully fabricated by solid-source (SS) and gas-source (GS) "hybrid" Si molecular beam epitaxy (MBE). First, the undoped SQW layer was grown on a p-type Si(100) substrate by GSMBE using disilane (Si₂H₆) and germane (GeH₄). Then the n-type Si contact layer was regrown by SSMBE after transferring the sample through the air. A (2 × 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. The excellent quality of the EL p-i-n device was shown by the sharpest emission lines, ≈5.5 meV, ever reported in the EL spectra of an SiGe system. Linear polarization along the SQW plane was also observed for no-phonon replica of EL.

Original language	English
Pages (from-to)	47-51
Number of pages	5
Journal	Journal of Electronic Materials
Volume	23
Issue number	1
DOIs	https://doi.org/10.1007/BF02651266
Publication status	Published - Jan 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02651266

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title = "Solid- and gas-source {"}hybrid{"} Si molecular beam epitaxy for a Si1-xGex/Si single quantum well electroluminescent device",

abstract = "A p-i-n diode for a Si1-xGex/Si single quantum well (SQW) electroluminescent (EL) device was successfully fabricated by solid-source (SS) and gas-source (GS) {"}hybrid{"} Si molecular beam epitaxy (MBE). First, the undoped SQW layer was grown on a p-type Si(100) substrate by GSMBE using disilane (Si2H6) and germane (GeH4). Then the n-type Si contact layer was regrown by SSMBE after transferring the sample through the air. A (2 × 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. The excellent quality of the EL p-i-n device was shown by the sharpest emission lines, ≈5.5 meV, ever reported in the EL spectra of an SiGe system. Linear polarization along the SQW plane was also observed for no-phonon replica of EL.",

author = "Y. Kato and S. Fukatsu and Y. Shiraki",

year = "1994",

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T1 - Solid- and gas-source "hybrid" Si molecular beam epitaxy for a Si1-xGex/Si single quantum well electroluminescent device

AU - Kato, Y.

AU - Fukatsu, S.

AU - Shiraki, Y.

PY - 1994/1

Y1 - 1994/1

N2 - A p-i-n diode for a Si1-xGex/Si single quantum well (SQW) electroluminescent (EL) device was successfully fabricated by solid-source (SS) and gas-source (GS) "hybrid" Si molecular beam epitaxy (MBE). First, the undoped SQW layer was grown on a p-type Si(100) substrate by GSMBE using disilane (Si2H6) and germane (GeH4). Then the n-type Si contact layer was regrown by SSMBE after transferring the sample through the air. A (2 × 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. The excellent quality of the EL p-i-n device was shown by the sharpest emission lines, ≈5.5 meV, ever reported in the EL spectra of an SiGe system. Linear polarization along the SQW plane was also observed for no-phonon replica of EL.

AB - A p-i-n diode for a Si1-xGex/Si single quantum well (SQW) electroluminescent (EL) device was successfully fabricated by solid-source (SS) and gas-source (GS) "hybrid" Si molecular beam epitaxy (MBE). First, the undoped SQW layer was grown on a p-type Si(100) substrate by GSMBE using disilane (Si2H6) and germane (GeH4). Then the n-type Si contact layer was regrown by SSMBE after transferring the sample through the air. A (2 × 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. The excellent quality of the EL p-i-n device was shown by the sharpest emission lines, ≈5.5 meV, ever reported in the EL spectra of an SiGe system. Linear polarization along the SQW plane was also observed for no-phonon replica of EL.

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Solid- and gas-source "hybrid" Si molecular beam epitaxy for a Si_1-xGe_x/Si single quantum well electroluminescent device

Abstract

All Science Journal Classification (ASJC) codes

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