SOI bipolar-MOS merged transistors for BiCMOS application

Yue Sheng Zheng; T. Asano

doi:10.1049/el:19990812

SOI bipolar-MOS merged transistors for BiCMOS application

Yue Sheng Zheng, T. Asano

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Contribution to journal › Article › peer-review

Abstract

A new MOSFET which has a built-in bipolar operation mechanism at the drain region has been fabricated using a bond-and-lap technique to form a silicon on insulator (SOI) structure. The results show that the merged transistors increase the transconductance by 15 times for a pMOS/npn transistor and by 60 times for an nMOS/pnp transistor as compared with conventional MOSFETs.

Original language	English
Pages (from-to)	1203-1204
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	14
DOIs	https://doi.org/10.1049/el:19990812
Publication status	Published - Jul 8 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19990812

Cite this

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title = "SOI bipolar-MOS merged transistors for BiCMOS application",

abstract = "A new MOSFET which has a built-in bipolar operation mechanism at the drain region has been fabricated using a bond-and-lap technique to form a silicon on insulator (SOI) structure. The results show that the merged transistors increase the transconductance by 15 times for a pMOS/npn transistor and by 60 times for an nMOS/pnp transistor as compared with conventional MOSFETs.",

author = "Zheng, {Yue Sheng} and T. Asano",

year = "1999",

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doi = "10.1049/el:19990812",

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AU - Zheng, Yue Sheng

AU - Asano, T.

PY - 1999/7/8

Y1 - 1999/7/8

N2 - A new MOSFET which has a built-in bipolar operation mechanism at the drain region has been fabricated using a bond-and-lap technique to form a silicon on insulator (SOI) structure. The results show that the merged transistors increase the transconductance by 15 times for a pMOS/npn transistor and by 60 times for an nMOS/pnp transistor as compared with conventional MOSFETs.

AB - A new MOSFET which has a built-in bipolar operation mechanism at the drain region has been fabricated using a bond-and-lap technique to form a silicon on insulator (SOI) structure. The results show that the merged transistors increase the transconductance by 15 times for a pMOS/npn transistor and by 60 times for an nMOS/pnp transistor as compared with conventional MOSFETs.

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DO - 10.1049/el:19990812

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JO - Electronics Letters

JF - Electronics Letters

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SOI bipolar-MOS merged transistors for BiCMOS application

Abstract

All Science Journal Classification (ASJC) codes

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