Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

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    Abstract

    A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance Ron A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better RonA-Ron Qsw and RonA-Ron Qg tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of Ron A, 11% of Ron Qsw, and 20% of Ron Qg can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest Ron A design.

    Original languageEnglish
    Article number9429711
    Pages (from-to)552-556
    Number of pages5
    JournalIEEE Journal of the Electron Devices Society
    Volume9
    DOIs
    Publication statusPublished - 2021

    All Science Journal Classification (ASJC) codes

    • Biotechnology
    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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