A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance Ron A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better RonA-Ron Qsw and RonA-Ron Qg tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of Ron A, 11% of Ron Qsw, and 20% of Ron Qg can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest Ron A design.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering