Site preference of atoms in heusler alloys Fe3Si and Fe 2MnSi grown on ge(111) toward realization of Ge channel spin transistors

Yoshihito Maeda; Yusuke Hiraiwa; Kazumasa Narumi; Atsuo Kawasuso; Yosikazu Terai; Yuichiro Ando; Koji Ueda; Taizoh Sadoh; Kohei Hamaya; Masanobu Miyao

Site preference of atoms in heusler alloys Fe₃Si and Fe ₂MnSi grown on ge(111) toward realization of Ge channel spin transistors

Yoshihito Maeda, Yusuke Hiraiwa, Kazumasa Narumi, Atsuo Kawasuso, Yosikazu Terai, Yuichiro Ando, Koji Ueda, Taizoh Sadoh, Kohei Hamaya, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Wc have examined quality of axial oricntation along thc Ge<111> direction in order to find dominant factors for epitaxy control of Fe or Fe layers on Ge(111) by 2.0MeV- ⁴He⁺ ion channeling measurements. The axial channeling along thc Gc<111> orientation reveled that the axial orientation at thc interface betwccn the Heusler alloy layer and Ge dcgraded as thc Mn content increased. This dcgradation may be causcd by increasing of a lattice misfit bctween Fe^3-xMn_xSi and Ge. We discusscd on atomic displacements consisting of thermal vibration and static displaccment due to disorders in the lattice using results obtained from low tcmperature channeling measurements.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications
Pages	13-18
Number of pages	6
Publication status	Published - 2008
Event	New Materials with High Spin Polarization and Their Applications - Boston, MA, United States Duration: Dec 1 2008 → Dec 5 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1119
ISSN (Print)	0272-9172

Other

Other	New Materials with High Spin Polarization and Their Applications
Country/Territory	United States
City	Boston, MA
Period	12/1/08 → 12/5/08

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Maeda, Y., Hiraiwa, Y., Narumi, K., Kawasuso, A., Terai, Y., Ando, Y., Ueda, K., Sadoh, T., Hamaya, K., & Miyao, M. (2008). Site preference of atoms in heusler alloys Fe₃Si and Fe ₂MnSi grown on ge(111) toward realization of Ge channel spin transistors. In Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications (pp. 13-18). (Materials Research Society Symposium Proceedings; Vol. 1119).

Site preference of atoms in heusler alloys Fe₃Si and Fe ₂MnSi grown on ge(111) toward realization of Ge channel spin transistors. / Maeda, Yoshihito; Hiraiwa, Yusuke; Narumi, Kazumasa et al.
Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications. 2008. p. 13-18 (Materials Research Society Symposium Proceedings; Vol. 1119).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Maeda, Y, Hiraiwa, Y, Narumi, K, Kawasuso, A, Terai, Y, Ando, Y, Ueda, K, Sadoh, T, Hamaya, K & Miyao, M 2008, Site preference of atoms in heusler alloys Fe₃Si and Fe ₂MnSi grown on ge(111) toward realization of Ge channel spin transistors. in Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications. Materials Research Society Symposium Proceedings, vol. 1119, pp. 13-18, New Materials with High Spin Polarization and Their Applications, Boston, MA, United States, 12/1/08.

Maeda Y, Hiraiwa Y, Narumi K, Kawasuso A, Terai Y, Ando Y et al. Site preference of atoms in heusler alloys Fe₃Si and Fe ₂MnSi grown on ge(111) toward realization of Ge channel spin transistors. In Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications. 2008. p. 13-18. (Materials Research Society Symposium Proceedings).

Maeda, Yoshihito ; Hiraiwa, Yusuke ; Narumi, Kazumasa et al. / Site preference of atoms in heusler alloys Fe₃Si and Fe ₂MnSi grown on ge(111) toward realization of Ge channel spin transistors. Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications. 2008. pp. 13-18 (Materials Research Society Symposium Proceedings).

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title = "Site preference of atoms in heusler alloys Fe3Si and Fe 2MnSi grown on ge(111) toward realization of Ge channel spin transistors",

abstract = "Wc have examined quality of axial oricntation along thc Ge<111> direction in order to find dominant factors for epitaxy control of Fe or Fe layers on Ge(111) by 2.0MeV- 4He+ ion channeling measurements. The axial channeling along thc Gc<111> orientation reveled that the axial orientation at thc interface betwccn the Heusler alloy layer and Ge dcgraded as thc Mn content increased. This dcgradation may be causcd by increasing of a lattice misfit bctween Fe3-xMnxSi and Ge. We discusscd on atomic displacements consisting of thermal vibration and static displaccment due to disorders in the lattice using results obtained from low tcmperature channeling measurements.",

author = "Yoshihito Maeda and Yusuke Hiraiwa and Kazumasa Narumi and Atsuo Kawasuso and Yosikazu Terai and Yuichiro Ando and Koji Ueda and Taizoh Sadoh and Kohei Hamaya and Masanobu Miyao",

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AU - Maeda, Yoshihito

AU - Hiraiwa, Yusuke

AU - Narumi, Kazumasa

AU - Kawasuso, Atsuo

AU - Terai, Yosikazu

AU - Ando, Yuichiro

AU - Ueda, Koji

AU - Sadoh, Taizoh

AU - Hamaya, Kohei

AU - Miyao, Masanobu

PY - 2008

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N2 - Wc have examined quality of axial oricntation along thc Ge<111> direction in order to find dominant factors for epitaxy control of Fe or Fe layers on Ge(111) by 2.0MeV- 4He+ ion channeling measurements. The axial channeling along thc Gc<111> orientation reveled that the axial orientation at thc interface betwccn the Heusler alloy layer and Ge dcgraded as thc Mn content increased. This dcgradation may be causcd by increasing of a lattice misfit bctween Fe3-xMnxSi and Ge. We discusscd on atomic displacements consisting of thermal vibration and static displaccment due to disorders in the lattice using results obtained from low tcmperature channeling measurements.

AB - Wc have examined quality of axial oricntation along thc Ge<111> direction in order to find dominant factors for epitaxy control of Fe or Fe layers on Ge(111) by 2.0MeV- 4He+ ion channeling measurements. The axial channeling along thc Gc<111> orientation reveled that the axial orientation at thc interface betwccn the Heusler alloy layer and Ge dcgraded as thc Mn content increased. This dcgradation may be causcd by increasing of a lattice misfit bctween Fe3-xMnxSi and Ge. We discusscd on atomic displacements consisting of thermal vibration and static displaccment due to disorders in the lattice using results obtained from low tcmperature channeling measurements.

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