TY - JOUR
T1 - Single step method to deposit Si quantum dot films using H2 + SiH4 VHF discharges and electron mobility in a Si quantum dot solar cell
AU - Shiratani, Masaharu
AU - Koga, Kazunori
AU - Ando, Soichiro
AU - Inoue, Toshihisa
AU - Watanabe, Yukio
AU - Nunomura, Shota
AU - Kondo, Michio
N1 - Funding Information:
This work was supported partly by the New Energy and Industrial Technology Development Organization (NEDO). The preparation of the experimental setup by Messrs. T. Kinoshita and H. Matsuzaki was greatly helpful.
PY - 2007/2/26
Y1 - 2007/2/26
N2 - To fabricate quantum dot solar cells of a high efficiency at a low cost, here we propose a Si quantum dot film which is composed of Si nano-crystallites embedded into a-Si:H and a single step method to deposit such Si quantum dot films using H2 + SiH4 VHF discharges. For the method, Si nano-crystallites of a small size dispersion and radicals produced in the discharges are co-deposited on a substrate to form Si quantum dot films. Using the method, we realized a volume fraction of dots in films of 0.3-70%. Photo- and dark-conductivity of films are in a range of 10- 11-10- 9 and 10- 5-10- 4 S/cm, respectively. We have examined effects of the size dispersion of nano-crystallites on electron mobility in a quantum dot Si solar cell by a simulation. The electron mobility in films for a size dispersion of 0.37 nm is about 50% of that in films for no size dispersion.
AB - To fabricate quantum dot solar cells of a high efficiency at a low cost, here we propose a Si quantum dot film which is composed of Si nano-crystallites embedded into a-Si:H and a single step method to deposit such Si quantum dot films using H2 + SiH4 VHF discharges. For the method, Si nano-crystallites of a small size dispersion and radicals produced in the discharges are co-deposited on a substrate to form Si quantum dot films. Using the method, we realized a volume fraction of dots in films of 0.3-70%. Photo- and dark-conductivity of films are in a range of 10- 11-10- 9 and 10- 5-10- 4 S/cm, respectively. We have examined effects of the size dispersion of nano-crystallites on electron mobility in a quantum dot Si solar cell by a simulation. The electron mobility in films for a size dispersion of 0.37 nm is about 50% of that in films for no size dispersion.
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U2 - 10.1016/j.surfcoat.2006.07.012
DO - 10.1016/j.surfcoat.2006.07.012
M3 - Article
AN - SCOPUS:33846469335
SN - 0257-8972
VL - 201
SP - 5468
EP - 5471
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
IS - 9-11 SPEC. ISS.
ER -