Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

Norihiko Kiritani; Masakatsu Hoshi; Satoshi Tanimoto; Kazuhiro Adachi; Shin ichi Nishizawa; Tsutomu Yatsuo; Hideyo Okushi; Kazuo Arai

doi:10.4028/www.scientific.net/msf.433-436.669

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shin ichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8×10 ^-5 Ωcm² for the n⁺ source region, 1.5×10^-6 Ωcm² for the gate polysilicon and 5.2×10^-4 Ωcm² for the p-well contact region were obtained using Al/Ni (Al∼6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.

Original language	English
Title of host publication	Materials Science Forum
Editors	Peder Bergman, Erik Janzén
Publisher	Trans Tech Publications Ltd
Pages	669-672
Number of pages	4
ISBN (Print)	9780878499205
DOIs	https://doi.org/10.4028/www.scientific.net/msf.433-436.669
Publication status	Published - Jan 1 2003
Externally published	Yes
Event	Proceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden Duration: Sept 2 2002 → Sept 5 2002

Publication series

Name	Materials Science Forum
Volume	433-436
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	Proceedings of the 4th European Conference on Silicon Carbide and Related Materials
Country/Territory	Sweden
City	Linkoping
Period	9/2/02 → 9/5/02

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/msf.433-436.669

Cite this

Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S. I., Yatsuo, T., Okushi, H., & Arai, K. (2003). Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 669-672). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.433-436.669

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. / Kiritani, Norihiko; Hoshi, Masakatsu; Tanimoto, Satoshi et al.
Materials Science Forum. ed. / Peder Bergman; Erik Janzén. Trans Tech Publications Ltd, 2003. p. 669-672 (Materials Science Forum; Vol. 433-436).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kiritani, N, Hoshi, M, Tanimoto, S, Adachi, K, Nishizawa, SI, Yatsuo, T, Okushi, H & Arai, K 2003, Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets. in P Bergman & E Janzén (eds), Materials Science Forum. Materials Science Forum, vol. 433-436, Trans Tech Publications Ltd, pp. 669-672, Proceedings of the 4th European Conference on Silicon Carbide and Related Materials, Linkoping, Sweden, 9/2/02. https://doi.org/10.4028/www.scientific.net/msf.433-436.669

@inproceedings{ca77cfc4c603499f8649ebd8c887cf2a,

title = "Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets",

abstract = "We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8×10 -5 Ωcm2 for the n+ source region, 1.5×10-6 Ωcm2 for the gate polysilicon and 5.2×10-4 Ωcm2 for the p-well contact region were obtained using Al/Ni (Al∼6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.",

author = "Norihiko Kiritani and Masakatsu Hoshi and Satoshi Tanimoto and Kazuhiro Adachi and Nishizawa, {Shin ichi} and Tsutomu Yatsuo and Hideyo Okushi and Kazuo Arai",

year = "2003",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/msf.433-436.669",

language = "English",

isbn = "9780878499205",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "669--672",

editor = "Peder Bergman and Erik Janz{\'e}n",

booktitle = "Materials Science Forum",

note = "Proceedings of the 4th European Conference on Silicon Carbide and Related Materials ; Conference date: 02-09-2002 Through 05-09-2002",

}

TY - GEN

T1 - Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

AU - Kiritani, Norihiko

AU - Hoshi, Masakatsu

AU - Tanimoto, Satoshi

AU - Adachi, Kazuhiro

AU - Nishizawa, Shin ichi

AU - Yatsuo, Tsutomu

AU - Okushi, Hideyo

AU - Arai, Kazuo

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8×10 -5 Ωcm2 for the n+ source region, 1.5×10-6 Ωcm2 for the gate polysilicon and 5.2×10-4 Ωcm2 for the p-well contact region were obtained using Al/Ni (Al∼6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.

AB - We fabricated 4H-SiC vertical MOSFETs with contacts to the source, p-well and polycrystalline silicon (polysilicon) gate and these were simultaneously formed from a single material, using one deposition and a single contact annealing process. Typical specific contact resistances of 4.8×10 -5 Ωcm2 for the n+ source region, 1.5×10-6 Ωcm2 for the gate polysilicon and 5.2×10-4 Ωcm2 for the p-well contact region were obtained using Al/Ni (Al∼6%) as the contact metal. Also, the static characteristics of the vertical MOSFETs indicated that the MOS interface can withstand an even higher temperature process such as that used in ohmic-contact formation.

UR - http://www.scopus.com/inward/record.url?scp=0242496522&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242496522&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.433-436.669

DO - 10.4028/www.scientific.net/msf.433-436.669

M3 - Conference contribution

AN - SCOPUS:0242496522

SN - 9780878499205

T3 - Materials Science Forum

SP - 669

EP - 672

BT - Materials Science Forum

A2 - Bergman, Peder

A2 - Janzén, Erik

PB - Trans Tech Publications Ltd

T2 - Proceedings of the 4th European Conference on Silicon Carbide and Related Materials

Y2 - 2 September 2002 through 5 September 2002

ER -

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

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