Single crystal growth of rare-earth gallates and epitactic growth nature of high-Tc superconducting YBCO thin films on them

S. Miyazawa, M. Sasaura, M. Mukaida

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Rare-earth gallates, NdGaO3 and PrGaO3, as substrates lattice-matched to superconducting YBCO thin films are grown using a Czochralski pulling technique. NdGaO3 was twin-free, while PrGaO3 was badly twinned. Twinning in PrGaO3 is presumably due to the first-order phase transition below the melting temperature. On twin-free NdGaO3 substrates, the initial growth stages of YBCO ultrathin films are observed by an atomic force microscope (AFM). AFM reveals that the growth mode is of Stranski-Krastanov, showing two-dimensional lateral growth and subsequent three-dimensional island formation, where the growth unit is one or multiples of the c-axis cell length in height.

Original languageEnglish
Pages (from-to)704-708
Number of pages5
JournalJournal of Crystal Growth
Volume128
Issue number1-4 PART 2
DOIs
Publication statusPublished - Mar 1 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Single crystal growth of rare-earth gallates and epitactic growth nature of high-Tc superconducting YBCO thin films on them'. Together they form a unique fingerprint.

Cite this