Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique

Mikio Koyano; Junya Tanaka; Koichiro Suekuni; Tomoki Ariga

doi:10.1007/s11664-011-1849-9

Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique

Mikio Koyano, Junya Tanaka, Koichiro Suekuni, Tomoki Ariga

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This report describes synthesis of binary Bi ₂Te ₃ and ternary Bi _0.5Sb _1.5Te ₃ single crystals using the halide chemical vapor transport technique. For synthesis of ternary Bi _0.5Sb _1.5Te ₃, BiBr ₃ is a more effective transport agent compared with iodine I ₂. The single crystal includes a few atomic percent of Br. The Bi _0.5Sb _1.5Te ₃ crystal shows p-type conduction and has a comparatively large residual resistivity ratio. The crystal exhibits relatively high electrical resistivity and high Seebeck coefficient. These high values are attributed to decrease of the hole concentration p due to doping of the transport agent Br.

Original language	English
Pages (from-to)	1317-1321
Number of pages	5
Journal	Journal of Electronic Materials
Volume	41
Issue number	6
DOIs	https://doi.org/10.1007/s11664-011-1849-9
Publication status	Published - Jun 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-011-1849-9

Cite this

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title = "Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique",

abstract = "This report describes synthesis of binary Bi 2Te 3 and ternary Bi 0.5Sb 1.5Te 3 single crystals using the halide chemical vapor transport technique. For synthesis of ternary Bi 0.5Sb 1.5Te 3, BiBr 3 is a more effective transport agent compared with iodine I 2. The single crystal includes a few atomic percent of Br. The Bi 0.5Sb 1.5Te 3 crystal shows p-type conduction and has a comparatively large residual resistivity ratio. The crystal exhibits relatively high electrical resistivity and high Seebeck coefficient. These high values are attributed to decrease of the hole concentration p due to doping of the transport agent Br.",

author = "Mikio Koyano and Junya Tanaka and Koichiro Suekuni and Tomoki Ariga",

note = "Funding Information: This work was supported by KAKENHI Grant-in-Aid for Scientific Research (C) No. 22560050 and Ogasawara Foundation for Promotion of Science and Technology.",

year = "2012",

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doi = "10.1007/s11664-011-1849-9",

language = "English",

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T1 - Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique

AU - Koyano, Mikio

AU - Tanaka, Junya

AU - Suekuni, Koichiro

AU - Ariga, Tomoki

N1 - Funding Information: This work was supported by KAKENHI Grant-in-Aid for Scientific Research (C) No. 22560050 and Ogasawara Foundation for Promotion of Science and Technology.

PY - 2012/6

Y1 - 2012/6

N2 - This report describes synthesis of binary Bi 2Te 3 and ternary Bi 0.5Sb 1.5Te 3 single crystals using the halide chemical vapor transport technique. For synthesis of ternary Bi 0.5Sb 1.5Te 3, BiBr 3 is a more effective transport agent compared with iodine I 2. The single crystal includes a few atomic percent of Br. The Bi 0.5Sb 1.5Te 3 crystal shows p-type conduction and has a comparatively large residual resistivity ratio. The crystal exhibits relatively high electrical resistivity and high Seebeck coefficient. These high values are attributed to decrease of the hole concentration p due to doping of the transport agent Br.

AB - This report describes synthesis of binary Bi 2Te 3 and ternary Bi 0.5Sb 1.5Te 3 single crystals using the halide chemical vapor transport technique. For synthesis of ternary Bi 0.5Sb 1.5Te 3, BiBr 3 is a more effective transport agent compared with iodine I 2. The single crystal includes a few atomic percent of Br. The Bi 0.5Sb 1.5Te 3 crystal shows p-type conduction and has a comparatively large residual resistivity ratio. The crystal exhibits relatively high electrical resistivity and high Seebeck coefficient. These high values are attributed to decrease of the hole concentration p due to doping of the transport agent Br.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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Single-crystal growth of Bi-Sb-Te thermoelectric materials by halide chemical vapor transport technique

Abstract

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