Single-Crystal Growth and Fermi Surface Properties of LaPd2Si2: Comparison with Pressure-Induced Heavy-Fermion Superconductor CePd2Si2

Yoshiki J. Sato, Fuminori Honda, Jiří Pospíšil, Ai Nakamura, Michal Vališka, Yusei Shimizu, Arvind Maurya, Yoshiya Homma, Dexin Li, Vladimír Sechovský, Hisatomo Harima, Dai Aoki

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Abstract

We report the single-crystal growth and comparative Fermi surface studies of LaPd2Si2 via de Haas–van Alphen (dHvA) experiments and theoretical band structure calculations, as a non-magnetic reference for pressure-induced heavy-fermion superconductor CePd2Si2. We grew the single crystals of LaPd2Si2 using the Czochralski and floating zone method. High-quality single crystals of LaPd2Si2 were obtained using the floating zone method, and clear dHvA signals were detected. We detected main Fermi surfaces in angular dependence measurements of the dHvA frequencies, revealing a good agreement with the result of band structure calculations based on the localized-4 f electron model. From our dHvA measurements using the high-quality single crystal, as well as our theoretical band structure calculations, we conclude that the 4 f electrons in CePd2Si2 are itinerant rather than localized in an intermediate antiferromagnetic state.

Original languageEnglish
Article number114708
Journaljournal of the physical society of japan
Volume91
Issue number11
DOIs
Publication statusPublished - Nov 15 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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