@inproceedings{43f4c18949d144ce900694a96e446b59,
title = "Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)",
abstract = "The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57mΩcm 2. The world record of Bariga's Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd2/Ron was improved to 11,354MW/cm2.",
author = "C. Ota and J. Nishio and T. Hatakeyama and T. Shinohe and K. Kojima and S. Nishizawa and H. Ohashi",
year = "2007",
doi = "10.4028/0-87849-442-1.881",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "881--884",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
note = "6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 ; Conference date: 03-09-2006 Through 07-09-2007",
}