Simulated characteristics of deep-submicrometer recessed channel epi-MOSFETs

Rohana Perera, Akihiro Ikeda, Yukinori Kuroki

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1 Citation (Scopus)


Characteristics of ultra short channel length recessed channel n-MOSFETs on a p on p+ epitaxial layer (RC epi-MOSFET) were simulated using the two dimensional device simulator MEDICI. The simulated recessed channel (RC) structure consists of thicker source/drain, zero source/drain junction depth and a lightly doped channel layer. Conventional short channel planar MOSFETs and RC-MOSFETs with uniformly doped substrate were also simulated for performance comparison. High field simulations were carried out using carrier energy balance equations while the single carrier drift-diffusion set of equations was used for low field simulations. Simulation results showed that the RC epi- structure has suppressed threshold voltage roll-off and lower subthreshold swing compared with planar and RC-MOSFETs with uniform substrate doping, without significant reduction in on-state current.

Original languageEnglish
Pages (from-to)67-72
Number of pages6
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Issue number2
Publication statusPublished - Sept 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Engineering (miscellaneous)


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