Abstract
Characteristics of ultra short channel length recessed channel n-MOSFETs on a p on p+ epitaxial layer (RC epi-MOSFET) were simulated using the two dimensional device simulator MEDICI. The simulated recessed channel (RC) structure consists of thicker source/drain, zero source/drain junction depth and a lightly doped channel layer. Conventional short channel planar MOSFETs and RC-MOSFETs with uniformly doped substrate were also simulated for performance comparison. High field simulations were carried out using carrier energy balance equations while the single carrier drift-diffusion set of equations was used for low field simulations. Simulation results showed that the RC epi- structure has suppressed threshold voltage roll-off and lower subthreshold swing compared with planar and RC-MOSFETs with uniform substrate doping, without significant reduction in on-state current.
| Original language | English |
|---|---|
| Pages (from-to) | 67-72 |
| Number of pages | 6 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 9 |
| Issue number | 2 |
| Publication status | Published - Sept 2004 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Hardware and Architecture
- Engineering (miscellaneous)