SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO 2 films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
Number of pages6
Publication statusPublished - Mar 23 2011
EventInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, Japan
Duration: Jun 3 2010Jun 5 2010

Publication series

NameKey Engineering Materials
ISSN (Print)1013-9826


OtherInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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