SiGeミキシング誘起溶融法による単結晶GOI (Ge on Insulator) 形成のシード基板面方位・成長方向依存性

Translated title of the contribution: Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process

大田 康晴, 田中 貴規, 佐道 泰造, 宮尾 正信

Research output: Contribution to journalArticlepeer-review

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Physics

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