SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成: 人工単結晶への道

正信 宮尾; 泰造 佐道; 薫 都甲; 昌志 黒澤

doi:10.11470/oubutsu.81.5_410

SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成: 人工単結晶への道

Translated title of the contribution: SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal

宮尾正信, 佐道泰造, 都甲薫, 黒澤昌志

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Abstract

<p>The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.</p>

Translated title of the contribution	SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation: A road to artificial crystal
Original language	Japanese
Pages (from-to)	410-414
Number of pages	5
Journal	応用物理
Volume	81
Issue number	5
DOIs	https://doi.org/10.11470/oubutsu.81.5_410
Publication status	Published - May 10 2012

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title = "SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成: 人工単結晶への道",

abstract = "The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.",

author = "正信宮尾 and 泰造佐道 and 薫都甲 and 昌志黒澤",

year = "2012",

month = may,

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doi = "10.11470/oubutsu.81.5_410",

language = "日本語",

volume = "81",

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T1 - SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成

T2 - 人工単結晶への道

AU - 宮尾, 正信

AU - 佐道, 泰造

AU - 都甲, 薫

AU - 黒澤, 昌志

PY - 2012/5/10

Y1 - 2012/5/10

N2 - The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.

AB - The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.

U2 - 10.11470/oubutsu.81.5_410

DO - 10.11470/oubutsu.81.5_410

M3 - 学術誌

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VL - 81

SP - 410

EP - 414

JO - 応用物理

JF - 応用物理

IS - 5

ER -

SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成: 人工単結晶への道

Abstract

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