SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8

Yoshifumi Ikoma; Ryota Ohtani; Nobuaki Matsui; Teruaki Motooka

SiC/Si-dots multilayer structures formed by supersonic free jets of CH ₃SiH₃ and Si₃H₈

Yoshifumi Ikoma, Ryota Ohtani, Nobuaki Matsui, Teruaki Motooka

Research output: Contribution to journal › Article › peer-review

Abstract

The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar⁺ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

Original language	English
Pages (from-to)	2492-2495
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
Publication status	Published - Nov 2003

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8",

abstract = "The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.",

author = "Yoshifumi Ikoma and Ryota Ohtani and Nobuaki Matsui and Teruaki Motooka",

year = "2003",

month = nov,

language = "English",

volume = "21",

pages = "2492--2495",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

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TY - JOUR

T1 - SiC/Si-dots multilayer structures formed by supersonic free jets of CH 3SiH3 and Si3H8

AU - Ikoma, Yoshifumi

AU - Ohtani, Ryota

AU - Matsui, Nobuaki

AU - Motooka, Teruaki

PY - 2003/11

Y1 - 2003/11

N2 - The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

AB - The formation of multilayer structures of SiC/Si-dots on Si(100) was investigated using supersonic free jet chemical vapor deposition. The depth profiles of the chemical shifts were examined using Ar+ sputtering at 4 kV. It was noted that the SiC film formed on Si-dots is thinner with respect to the Si substrate. It was suggested that the SiC/Si-dots structures could be fabricated using supersonic free jet CVD.

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M3 - Article

AN - SCOPUS:0942288903

SN - 1071-1023

VL - 21

SP - 2492

EP - 2495

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

SiC/Si-dots multilayer structures formed by supersonic free jets of CH ₃SiH₃ and Si₃H₈

Abstract

All Science Journal Classification (ASJC) codes

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