Abstract
On-axis and vicinal 4H- and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed one-dimensionally ordered SiC surface nanostructures, which were energetically induced by self-ordering of nano-facets on any surfaces, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes were typically revealed; (0001) and high index (112̄n) that are formed by equilibrium surface phase separation. A (112̄n) surface may have a free energy minimum due to attractive step-step interactions.
| Original language | English |
|---|---|
| Pages (from-to) | 407-410 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 457-460 |
| Issue number | I |
| DOIs | |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering