SiC-CMP characteristics under high pressure gas atmospheres using manganese slurry

Tadashi Hasegawa, Toshiro K. Doi, Syuhei Kurokawa, Osamu Ohnishi, Yasuhiro Kawase, Yasuhide Yamaguchi, Sadahiro Kishii

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The objective of this research is to achieve high efficient and high quality CMP of SiC wafer using manganese oxide slurries. As a result, high removal rate was obtained with manganese dioxide (MnO2) abrasives especially in high pH region. Also the authors examined the influence of various gases around work pieces. Applying high pressure oxygen gas results in higher removal rate than that in normal atmospheric condition.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Number of pages2
Publication statusPublished - 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: Oct 5 2010Oct 7 2010

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766


OtherAdvanced Metallization Conference 2010
Country/TerritoryUnited States
CityAlbany, NY

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Industrial and Manufacturing Engineering


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