TY - GEN
T1 - Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy
AU - Shirasawa, T.
AU - Tanaka, S.
AU - Muro, T.
AU - Tamenori, Y.
AU - Harada, Y.
AU - Tokushima, T.
AU - Kinoshita, T.
AU - Shin, S.
AU - Takahashi, T.
AU - Tochihara, H.
PY - 2011
Y1 - 2011
N2 - The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.
AB - The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.
UR - http://www.scopus.com/inward/record.url?scp=79952548267&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952548267&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.675-677.15
DO - 10.4028/www.scientific.net/MSF.675-677.15
M3 - Conference contribution
AN - SCOPUS:79952548267
SN - 9783037850497
T3 - Materials Science Forum
SP - 15
EP - 19
BT - Advanced Material Science and Technology
PB - Trans Tech Publications Ltd
ER -