Abstract
In order to develop lightweight and high angular resolution x-ray mirrors, we have investigated hot plastic deformation of 4 in. silicon (111) wafers. A sample wafer was deformed using hemispherical dies with a curvature radius of 1000mm. The measured radius of the deformed wafer was 1030mm, suggesting that further conditioning is indispensable for better shaping. For the first time to our knowledge, x-ray reflection on a deformed wafer was detected at Al K α 1:49keV. An estimated surface roughness of <1nm from the x-ray reflection profile was comparable to that of a bare silicon wafer without deformation. Hence, no significant degradation of the microroughness was seen.
Original language | English |
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Pages (from-to) | 3830-3838 |
Number of pages | 9 |
Journal | Applied Optics |
Volume | 48 |
Issue number | 19 |
DOIs | |
Publication status | Published - Jul 1 2009 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics