Shape of SiC bulk single crystal grown by sublimation

Shin Ichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


Numerical simulation of sublimation SiC bulk single crystal growth was performed. Electromagnetic and temperature fields in a growth furnace were analyzed numerically. The relation between grown crystal shape and temperature distribution in a growth cavity was discussed. It is pointed out that the crystal shape has a close relationship with temperature distribution. By modifying the crucible design and temperature distribution in a growth cavity, it is possible to enhance the enlargement of grown crystal, and also possible to keep grown surface flat.

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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