Sensitization of SnO2-based thick film sensor for ethylene oxide gas

M. Kugishima; K. Shimanoe; N. Yamazoe

Sensitization of SnO₂-based thick film sensor for ethylene oxide gas

M. Kugishima, K. Shimanoe, N. Yamazoe

Functional Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Doping SnO₂ with Sb was investigated in relation with sensitization of a SnO₂-based thick film sensor for C ₂H₄O gas. With Sb doping by 0.05 or 0.1%, resistances of the films lowered drastically, suggesting an optimum Sb doping of about 0.05%. When loaded with La₂O₃(0.5 wt.%), Sb(0.05 at.%)-SnO ₂ gave sensor response (R_air/R_gas) exceeding 4 to 1 ppm C₂H₄O at 250°C. Although this performance was almost comparable with that exhibited by the device using neat SnO₂, the electrical resistance of the former device was still at 10⁶ Ωat 250°C and appeared to afford further loading with Pt or Pd for promotion of rates of response and recovery.

Original language	English
Pages	43-48
Number of pages	6
Publication status	Published - 2004
Event	Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@conference{010fedd0697b4d0b9d55b5e20efeedd8,

title = "Sensitization of SnO2-based thick film sensor for ethylene oxide gas",

abstract = "Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C 2H4O gas. With Sb doping by 0.05 or 0.1%, resistances of the films lowered drastically, suggesting an optimum Sb doping of about 0.05%. When loaded with La2O3(0.5 wt.%), Sb(0.05 at.%)-SnO 2 gave sensor response (Rair/Rgas) exceeding 4 to 1 ppm C2H4O at 250°C. Although this performance was almost comparable with that exhibited by the device using neat SnO2, the electrical resistance of the former device was still at 106 Ωat 250°C and appeared to afford further loading with Pt or Pd for promotion of rates of response and recovery.",

author = "M. Kugishima and K. Shimanoe and N. Yamazoe",

year = "2004",

language = "English",

pages = "43--48",

note = "Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - Sensitization of SnO2-based thick film sensor for ethylene oxide gas

AU - Kugishima, M.

AU - Shimanoe, K.

AU - Yamazoe, N.

PY - 2004

Y1 - 2004

N2 - Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C 2H4O gas. With Sb doping by 0.05 or 0.1%, resistances of the films lowered drastically, suggesting an optimum Sb doping of about 0.05%. When loaded with La2O3(0.5 wt.%), Sb(0.05 at.%)-SnO 2 gave sensor response (Rair/Rgas) exceeding 4 to 1 ppm C2H4O at 250°C. Although this performance was almost comparable with that exhibited by the device using neat SnO2, the electrical resistance of the former device was still at 106 Ωat 250°C and appeared to afford further loading with Pt or Pd for promotion of rates of response and recovery.

AB - Doping SnO2 with Sb was investigated in relation with sensitization of a SnO2-based thick film sensor for C 2H4O gas. With Sb doping by 0.05 or 0.1%, resistances of the films lowered drastically, suggesting an optimum Sb doping of about 0.05%. When loaded with La2O3(0.5 wt.%), Sb(0.05 at.%)-SnO 2 gave sensor response (Rair/Rgas) exceeding 4 to 1 ppm C2H4O at 250°C. Although this performance was almost comparable with that exhibited by the device using neat SnO2, the electrical resistance of the former device was still at 106 Ωat 250°C and appeared to afford further loading with Pt or Pd for promotion of rates of response and recovery.

UR - http://www.scopus.com/inward/record.url?scp=17044365772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044365772&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044365772

SP - 43

EP - 48

T2 - Chemical Sensors VI: Chemical and Biological Sensors and Analytical Methods - Proceedings of the International Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Sensitization of SnO₂-based thick film sensor for ethylene oxide gas

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this