Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Norio Miura, Tatsuro Harada, Nobuaki Yoshida, Youichi Shimizu, Noboru Yamazoe

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalSensors and Actuators: B. Chemical
Issue number1-3
Publication statusPublished - Apr 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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