Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Norio Miura; Tatsuro Harada; Nobuaki Yoshida; Youichi Shimizu; Noboru Yamazoe

doi:10.1016/0925-4005(95)85107-0

Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Norio Miura, Tatsuro Harada, Nobuaki Yoshida, Youichi Shimizu, Noboru Yamazoe

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An FET-based microsensor using a proton conductor for detecting a small concentration of H₂ in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (I_D) at 30°C, the output voltage (V_GS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H₂ concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H₂ sensor previously reported. The 90% response time to 5000 ppm H₂ is as short as ≈ 5 s. The H₂-sensing mechanism of the present microsensor is briefly discussed.

Original language	English
Pages (from-to)	499-503
Number of pages	5
Journal	Sensors and Actuators: B. Chemical
Volume	25
Issue number	1-3
DOIs	https://doi.org/10.1016/0925-4005(95)85107-0
Publication status	Published - Apr 1995
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/0925-4005(95)85107-0

Cite this

@article{74c1dfad58054ae3a1d712cf706e526c,

title = "Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film",

abstract = "An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.",

author = "Norio Miura and Tatsuro Harada and Nobuaki Yoshida and Youichi Shimizu and Noboru Yamazoe",

year = "1995",

month = apr,

doi = "10.1016/0925-4005(95)85107-0",

language = "English",

volume = "25",

pages = "499--503",

journal = "Sensors and Actuators: B. Chemical",

issn = "0925-4005",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

AU - Miura, Norio

AU - Harada, Tatsuro

AU - Yoshida, Nobuaki

AU - Shimizu, Youichi

AU - Yamazoe, Noboru

PY - 1995/4

Y1 - 1995/4

N2 - An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.

AB - An FET-based microsensor using a proton conductor for detecting a small concentration of H2 in air at room temperature has been fabricated by attaching an antimonic-acid thick film (≈ 20 μm thick) and a sensing Pt electrode to an ISFET device. Under a constant drain current (ID) at 30°C, the output voltage (VGS) between the sensing electrode and the source is almost linearly correlated with the logarithm of H2 concentration in the range 4-5000 ppm. The slope of the correlation, ≈ - 120 mV/decade, is comparable to that for the non-FET type solid-state potentiometric H2 sensor previously reported. The 90% response time to 5000 ppm H2 is as short as ≈ 5 s. The H2-sensing mechanism of the present microsensor is briefly discussed.

UR - http://www.scopus.com/inward/record.url?scp=0029292953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029292953&partnerID=8YFLogxK

U2 - 10.1016/0925-4005(95)85107-0

DO - 10.1016/0925-4005(95)85107-0

M3 - Article

AN - SCOPUS:0029292953

SN - 0925-4005

VL - 25

SP - 499

EP - 503

JO - Sensors and Actuators: B. Chemical

JF - Sensors and Actuators: B. Chemical

IS - 1-3

ER -

Sensing characteristics of ISFET-based hydrogen sensor using proton-conductive thick film

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this