Semisuperjunction MOSFETs: New design concept for lower on-resistance and softer reverse-recovery body diode

Wataru Saito; Ichiro Omura; Satoshi Aida; Shigeo Koduki; Masaru Izumisawa; Tsumeo Ogura

doi:10.1109/TED.2003.815126

Semisuperjunction MOSFETs: New design concept for lower on-resistance and softer reverse-recovery body diode

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Tsumeo Ogura

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to the bottom of the SJ structure. According to the results of experiment and simulation, the semi-SJ structure has both lower on-resistance and softer recovery of body diode than conventional SJ MOSFETs. The fabricated semi-SJ MOSFETs with breakdown voltage of 690 V realize on-resistance 28% lower than that of the conventional SJ MOSFET with same aspect ratio. The softness factor of the body diode is also improved by a factor of five. The proposed MOSFET is very attractive for H bridge topology applications, such as switching mode power supplies and small inverter systems, thanks to the low on-resistance and the soft recovery body diode.

Original language	English
Pages (from-to)	1801-1806
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	8
DOIs	https://doi.org/10.1109/TED.2003.815126
Publication status	Published - Aug 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.815126

Cite this

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abstract = "A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to the bottom of the SJ structure. According to the results of experiment and simulation, the semi-SJ structure has both lower on-resistance and softer recovery of body diode than conventional SJ MOSFETs. The fabricated semi-SJ MOSFETs with breakdown voltage of 690 V realize on-resistance 28% lower than that of the conventional SJ MOSFET with same aspect ratio. The softness factor of the body diode is also improved by a factor of five. The proposed MOSFET is very attractive for H bridge topology applications, such as switching mode power supplies and small inverter systems, thanks to the low on-resistance and the soft recovery body diode.",

author = "Wataru Saito and Ichiro Omura and Satoshi Aida and Shigeo Koduki and Masaru Izumisawa and Tsumeo Ogura",

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T1 - Semisuperjunction MOSFETs

T2 - New design concept for lower on-resistance and softer reverse-recovery body diode

AU - Saito, Wataru

AU - Omura, Ichiro

AU - Aida, Satoshi

AU - Koduki, Shigeo

AU - Izumisawa, Masaru

AU - Ogura, Tsumeo

PY - 2003/8

Y1 - 2003/8

N2 - A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to the bottom of the SJ structure. According to the results of experiment and simulation, the semi-SJ structure has both lower on-resistance and softer recovery of body diode than conventional SJ MOSFETs. The fabricated semi-SJ MOSFETs with breakdown voltage of 690 V realize on-resistance 28% lower than that of the conventional SJ MOSFET with same aspect ratio. The softness factor of the body diode is also improved by a factor of five. The proposed MOSFET is very attractive for H bridge topology applications, such as switching mode power supplies and small inverter systems, thanks to the low on-resistance and the soft recovery body diode.

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Semisuperjunction MOSFETs: New design concept for lower on-resistance and softer reverse-recovery body diode

Abstract

All Science Journal Classification (ASJC) codes

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