TY - GEN
T1 - Semiconductor device cleaning with liquid aerosol nozzle using rotary atomizer method
AU - Seike, Yoshiyuki
AU - Miyachi, Keiji
AU - Kurokawa, Syuhei
AU - Ohnishi, Osamu
AU - Doi, Toshiro
PY - 2010
Y1 - 2010
N2 - A liquid aerosol, which sprays cleaning liquid with a carrier gas, is widely used for cleaning semiconductor devices. The liquid aerosol using a conventional two-fluid nozzle may cause pattern damage on the wafer. To resolve this problem, we have made a prototype new rotary atomizing two-fluid cleaning nozzle (RAC nozzle), which can control the velocity distribution and size distribution of flying liquid droplets separately. It could be atomized to 20 μm or less at a rotational speed of the air turbine of 50,000 min -1 and that the mean velocity of the flying liquid droplets could be controlled in the range under 65 m/s independently. It was confirmed in a cleaning experiment using polystyrene latex (PSL) particles on a wafer that particle removal efficiency increased when shaping air pressure increased. Also, the particle removal efficiency was improved with the finer atomization promoted by a higher rotational speed of the air turbine.
AB - A liquid aerosol, which sprays cleaning liquid with a carrier gas, is widely used for cleaning semiconductor devices. The liquid aerosol using a conventional two-fluid nozzle may cause pattern damage on the wafer. To resolve this problem, we have made a prototype new rotary atomizing two-fluid cleaning nozzle (RAC nozzle), which can control the velocity distribution and size distribution of flying liquid droplets separately. It could be atomized to 20 μm or less at a rotational speed of the air turbine of 50,000 min -1 and that the mean velocity of the flying liquid droplets could be controlled in the range under 65 m/s independently. It was confirmed in a cleaning experiment using polystyrene latex (PSL) particles on a wafer that particle removal efficiency increased when shaping air pressure increased. Also, the particle removal efficiency was improved with the finer atomization promoted by a higher rotational speed of the air turbine.
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M3 - Conference contribution
AN - SCOPUS:79957659156
SN - 9781617822810
T3 - Advanced Metallization Conference (AMC)
SP - 296
EP - 297
BT - Advanced Metallization Conference 2010
T2 - Advanced Metallization Conference 2010
Y2 - 5 October 2010 through 7 October 2010
ER -