Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

Ling Han Li; Ryo Takigawa; Akio Higo; Masanori Kubota; Eiji Higurashi; Masakazu Sugiyama; Yoshiaki Nakano

doi:10.1109/ICIPRM.2009.5012490

Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

Ling Han Li, Ryo Takigawa, Akio Higo, Masanori Kubota, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

Original language	English
Title of host publication	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages	230-233
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2009.5012490
Publication status	Published - 2009
Externally published	Yes
Event	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States Duration: May 10 2009 → May 14 2009

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Other

Other	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/Territory	United States
City	Newport Beach, CA
Period	5/10/09 → 5/14/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ICIPRM.2009.5012490

Cite this

Li, L. H., Takigawa, R., Higo, A., Kubota, M., Higurashi, E., Sugiyama, M., & Nakano, Y. (2009). Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 230-233). Article 5012490 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012490

Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser. / Li, Ling Han; Takigawa, Ryo; Higo, Akio et al.
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 230-233 5012490 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, LH, Takigawa, R, Higo, A, Kubota, M, Higurashi, E, Sugiyama, M & Nakano, Y 2009, Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser. in IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009., 5012490, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 230-233, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 5/10/09. https://doi.org/10.1109/ICIPRM.2009.5012490

Li LH, Takigawa R, Higo A, Kubota M, Higurashi E, Sugiyama M et al. Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 230-233. 5012490. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2009.5012490

Li, Ling Han ; Takigawa, Ryo ; Higo, Akio et al. / Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser. IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. pp. 230-233 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

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title = "Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser",

abstract = "The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.",

author = "Li, {Ling Han} and Ryo Takigawa and Akio Higo and Masanori Kubota and Eiji Higurashi and Masakazu Sugiyama and Yoshiaki Nakano",

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AU - Li, Ling Han

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AU - Higurashi, Eiji

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

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AB - The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

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BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

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Semiconductive properties of heterointegration of InP/InGaAs on high doped silicon wire waveguide for silicon hybrid laser

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