Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn

Ryo Matsumura, Yuki Kinoshita, Yuki Tojo, Taizoh Sadoh, Tomoaki Nishimura, Masanobu Miyao

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1 Citation (Scopus)


Low-temperature annealing (450-700°C) of a-Ge/Sn/c-Ge stacked-structures is examined to achieve high-quality GeSn singlecrystals on Ge substrates. Abnormal phenomena, where a GeSn-layer travels toward the surface during annealing, were found. In-depth analyses of Sn distribution together with epitaxial-growth clarify the mechanisms, i.e., diffusion of Ge atoms from a-Ge into molten-Sn, and subsequent release of GeSn atoms into c-Ge substrates cause the traveling-zone-melting-growth in self-organizingmanner. Transmission- electron-microscopy observation reveals the defect-free GeSn layers on Ge substrates. High thermal-stability of non-equilibrium Sn concentration in GeSn is guaranteed by post-annealing (~600°C) experiments. This method provides the unique tool to achieve multi-functional-devices based on GeSn-related hetero-structures.

Original languageEnglish
Pages (from-to)P340-P343
JournalECS Journal of Solid State Science and Technology
Issue number10
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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