Self-organized criticality in an interface-growth model with quenched randomness

Hidetsugu Sakaguchi

doi:10.1103/PhysRevE.82.032101

Self-organized criticality in an interface-growth model with quenched randomness

Hidetsugu Sakaguchi

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We study a modified model of the Kardar-Paris-Zhang equation with quenched disorder, in which the driving force decreases as the interface rises up. A critical state is self-organized, and the anomalous scaling law with roughness exponent α∼0.63 is numerically obtained.

Original language	English
Article number	032101
Journal	Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
Volume	82
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevE.82.032101
Publication status	Published - Sept 9 2010

All Science Journal Classification (ASJC) codes

Statistical and Nonlinear Physics
Statistics and Probability
Condensed Matter Physics

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10.1103/PhysRevE.82.032101

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abstract = "We study a modified model of the Kardar-Paris-Zhang equation with quenched disorder, in which the driving force decreases as the interface rises up. A critical state is self-organized, and the anomalous scaling law with roughness exponent α∼0.63 is numerically obtained.",

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Self-organized criticality in an interface-growth model with quenched randomness

Abstract

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