TY - JOUR
T1 - Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere
AU - Kanno, R.
AU - Wada, T.
AU - Yamazaki, Y.
AU - Wang, J.
AU - Isshiki, M.
AU - Iijima, Y.
N1 - Funding Information:
This work was supported by the Murata Science Foundation and Nippon Sheet Glass Foundation for Materials Science and Engineering.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/10
Y1 - 2003/10
N2 - Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.
AB - Diffusion behavior of Cd in volume and along dislocations in high-purity CdTe annealed in Te-saturated atmosphere has been studied by the radioactive tracer method with a serial ion-beam sputter-microsectioning technique. The temperature dependence of volume diffusion coefficients shows a bend around 773K, whereas that of the self-diffusion along dislocations shows a straight line. This suggests that the defect induced by impurities enhances the volume diffusion but does not affect the diffusion along dislocations.
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U2 - 10.1016/j.mssp.2003.07.020
DO - 10.1016/j.mssp.2003.07.020
M3 - Article
AN - SCOPUS:1642587281
SN - 1369-8001
VL - 6
SP - 319
EP - 322
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 5-6
ER -