Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors

Satoshi Sasaki, Kouta Tateno, Guoqiang Zhang, Henry Pigot, Yuichi Harada, Shiro Saito, Akira Fujiwara, Tetsuomi Sogawa, Koji Muraki

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Field-effect transistors (FETs) are fabricated using an optimized gate-all-around gate-overlap structure and an InAs/InP core-shell nanowire (NW) channel. A short-channel device with the gate length of 100nm exhibits superb on-state properties. Subthreshold swing of 85mV/decade is realized in a long-channel device, suggesting an advantage of the core-shell NW channel. Post-annealing is found to improve the subthreshold properties, which is partly ascribed to the formation of InAlAs alloy at the interface between the InAs core and Al source/drain electrodes.

Original languageEnglish
Article number04DN04
JournalJapanese journal of applied physics
Issue number4
Publication statusPublished - Apr 1 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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