Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

K. Kato; M. Yuda; A. Kozen; Y. Muramoto; K. Noguchi; O. Nakajima

doi:10.1049/el:19961370

Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

K. Kato, M. Yuda, A. Kozen, Y. Muramoto, K. Noguchi, O. Nakajima

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500MHz at 1V and 250MHz even at 0V.

Original language	English
Pages (from-to)	2078-2079
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	22
DOIs	https://doi.org/10.1049/el:19961370
Publication status	Published - Oct 24 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1049/el:19961370

Cite this

@article{e9f72545999144c684fbcc0d50a77880,

title = "Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules",

abstract = "The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500MHz at 1V and 250MHz even at 0V.",

author = "K. Kato and M. Yuda and A. Kozen and Y. Muramoto and K. Noguchi and O. Nakajima",

year = "1996",

month = oct,

day = "24",

doi = "10.1049/el:19961370",

language = "English",

volume = "32",

pages = "2078--2079",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "22",

}

TY - JOUR

T1 - Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

AU - Kato, K.

AU - Yuda, M.

AU - Kozen, A.

AU - Muramoto, Y.

AU - Noguchi, K.

AU - Nakajima, O.

PY - 1996/10/24

Y1 - 1996/10/24

N2 - The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500MHz at 1V and 250MHz even at 0V.

AB - The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500MHz at 1V and 250MHz even at 0V.

UR - http://www.scopus.com/inward/record.url?scp=0030263315&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030263315&partnerID=8YFLogxK

U2 - 10.1049/el:19961370

DO - 10.1049/el:19961370

M3 - Article

AN - SCOPUS:0030263315

SN - 0013-5194

VL - 32

SP - 2078

EP - 2079

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption optical hybrid modules

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this