Abstract
The incorporation of oxygen into silicon single crystals from the melt is examined in terms of an experiment and a model on a transient solidification. A transient analysis offered an effective segregation coefficient of oxygen in silicon and a diffusion constant of oxygen in the melt almost independently. The analysis estimated these values of effective segregation coefficient of oxygen in silicon and diffusion constant of oxygen in the melt.
| Original language | English |
|---|---|
| Pages (from-to) | 1692-1695 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 145 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
