@inproceedings{b4665c6979684901af0f2a301d3322a4,
title = "Schottky barrier height control at metal/Ge interface by insertion of nitrogen contained amorphous layer",
abstract = "Ge is attracting great attention as a candidate of channel material for future CMOS devices and near-infrared optical devices, owing to its high intrinsic carrier mobility and narrow bandgap. One of the difficulties to realize Ge-based devices is to control of the Schottky barrier height (SBH) at metal/Ge interface. It is widely known any metal/Ge contacts show high electron barrier height (ΦBN > 0.5 eV) due to Fermi level pinning (FLP) at the metal/Ge interface. Our group found a method to alleviate the FLP, by which sputter-deposited ZrN/Ge contact showed low ΦBN (< 0.10 eV) and high hole barrier height (ΦBP > 0.56 eV). From detailed structural analyses, FLP alleviation was induced by a nitrogen contained amorphous interlayer (a-IL) formed during ZrN sputter-deposition. If we can change the kind of metal on a-IL, we may extend the control range of SBH. In this paper, we demonstrate the wide range SBH control for metal/a-IL/Ge contacts.",
author = "Keisuke Yamamoto and Dong Wang and Hiroshi Nakashima",
note = "Funding Information: This work was partially supported by (JSPS) KAKENHI (grant numbers 25249035 and 25886010), “Kyushu University Interdisciplinary Programs in Education and Projects Publisher Copyright: {\textcopyright} The Electrochemical Society; 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 ; Conference date: 30-05-2021 Through 03-06-2021",
year = "2021",
doi = "10.1149/10204.0063ecst",
language = "English",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "4",
pages = "63--71",
editor = "E. Simoen and O. Kononchuk and O. Nakatsuka and C. Claeys",
booktitle = "239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16",
address = "United Kingdom",
edition = "4",
}