The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)