Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface

Anton Visikovskiy; Masamichi Yoshimura; Kazuyuki Ueda

doi:10.1143/JJAP.49.08LB05

Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface

Anton Visikovskiy, Masamichi Yoshimura, Kazuyuki Ueda

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.

Original language	English
Article number	08LB05
Journal	Japanese journal of applied physics
Volume	49
Issue number	8 PART 4
DOIs	https://doi.org/10.1143/JJAP.49.08LB05
Publication status	Published - Aug 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.49.08LB05

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abstract = "The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed {"}16 × 2{"} areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local {"}4 × 5{"} structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.",

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AU - Yoshimura, Masamichi

AU - Ueda, Kazuyuki

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N2 - The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.

AB - The in situ hydrogenation of the Si(110) surface has been studied by scanning tunneling microscopy. It has been found that a small amount of atomic hydrogen (H) generates missing protrusion defects in the reconstructed "16 × 2" areas. In the disordered areas, a small amount of H results in the rearrangement of pentagon pairs into a local "4 × 5" structure after annealing. The saturation coverage and higher temperatures result in a new type of zigzag-like surface structure. The structures formed on Si(110) by in situ hydrogenation are significantly different from those on hydrogenated surfaces obtained by chemical methods, where 1 × 1 reconstruction is dominant.

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Scanning tunneling microscopy study of in situ hydrogenation of Si(110) surface

Abstract

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