Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

Yung Chang Lin; Hyun Goo Ji; Li Jen Chang; Yao Pang Chang; Zheng Liu; Gun Do Lee; Po Wen Chiu; Hiroki Ago; Kazu Suenaga

doi:10.1021/acsnano.0c01729

Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

Yung Chang Lin, Hyun Goo Ji, Li Jen Chang, Yao Pang Chang, Zheng Liu, Gun Do Lee, Po Wen Chiu, Hiroki Ago, Kazu Suenaga

Advanced Project Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.

Original language	English
Pages (from-to)	6034-6042
Number of pages	9
Journal	ACS nano
Volume	14
Issue number	5
DOIs	https://doi.org/10.1021/acsnano.0c01729
Publication status	Published - May 26 2020

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/acsnano.0c01729

Cite this

@article{5243be94fdeb46a6b139a4acce332d5b,

title = "Scanning Moir{\'e} Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials",

abstract = "Scanning moir{\'e} fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.",

author = "Lin, {Yung Chang} and Ji, {Hyun Goo} and Chang, {Li Jen} and Chang, {Yao Pang} and Zheng Liu and Lee, {Gun Do} and Chiu, {Po Wen} and Hiroki Ago and Kazu Suenaga",

note = "Funding Information: Y.-C.L. and K.S. acknowledge the JSPS-KAKENHI (JP16H06333), (18K14119), JSPS A3 Foresight Program, and Kazato Research Encouragement Prize. H.G.J. and H.A. acknowledge the support of JSPS KAKENHI Grant Nos. JP18H03864 and JP19K22113, JST CREST No. JPMJCR1811, Japan, and JSPS A3 Foresight Program. P.-W.C. appreciates the project support of Taiwan Ministry of Science and Technology: Grant Nos. MOST 107-2119-M-007-011-MY2 and MOST 106-2628-M-007-003-MY3. G.-D.L acknowledges support from the National Research Foundation (NRF) of Korea (Grant Nos. RIAM 2019R1A2C2005098 and 2017M3D1A1040688). Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = may,

day = "26",

doi = "10.1021/acsnano.0c01729",

language = "English",

volume = "14",

pages = "6034--6042",

journal = "ACS nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Scanning Moiré Fringe Method

T2 - A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

AU - Lin, Yung Chang

AU - Ji, Hyun Goo

AU - Chang, Li Jen

AU - Chang, Yao Pang

AU - Liu, Zheng

AU - Lee, Gun Do

AU - Chiu, Po Wen

AU - Ago, Hiroki

AU - Suenaga, Kazu

N1 - Funding Information: Y.-C.L. and K.S. acknowledge the JSPS-KAKENHI (JP16H06333), (18K14119), JSPS A3 Foresight Program, and Kazato Research Encouragement Prize. H.G.J. and H.A. acknowledge the support of JSPS KAKENHI Grant Nos. JP18H03864 and JP19K22113, JST CREST No. JPMJCR1811, Japan, and JSPS A3 Foresight Program. P.-W.C. appreciates the project support of Taiwan Ministry of Science and Technology: Grant Nos. MOST 107-2119-M-007-011-MY2 and MOST 106-2628-M-007-003-MY3. G.-D.L acknowledges support from the National Research Foundation (NRF) of Korea (Grant Nos. RIAM 2019R1A2C2005098 and 2017M3D1A1040688). Publisher Copyright: © 2020 American Chemical Society.

PY - 2020/5/26

Y1 - 2020/5/26

N2 - Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.

AB - Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.

UR - http://www.scopus.com/inward/record.url?scp=85085535280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85085535280&partnerID=8YFLogxK

U2 - 10.1021/acsnano.0c01729

DO - 10.1021/acsnano.0c01729

M3 - Article

C2 - 32324376

AN - SCOPUS:85085535280

SN - 1936-0851

VL - 14

SP - 6034

EP - 6042

JO - ACS nano

JF - ACS nano

IS - 5

ER -

Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this